| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10706835 | Current Applied Physics | 2005 | 4 Pages |
Abstract
Organic light emitting transistors which are vertically combined with the organic static induction transistor and organic light emitting diode are fabricated and the device characteristics depending on the structure of gate electrode are investigated. By optimizing the layer thickness and the size of slit-type Al gate electrode, high luminance modulation by low gate voltage as high as 1 V are obtained. The organic light emitting transistor described here is a suitable element for flexible sheet displays.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Kazuhiro Kudo,