| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10727434 | Physics Letters A | 2012 | 4 Pages |
Abstract
⺠Geometric model describing the origin of the observed shallow levels in semiconductors threaded by a dislocation density. ⺠Binding charge carriers in Landau-like levels due to the presence of a density of screw dislocations. ⺠Bound states for a spin-half quantum particle for both repulsive and attractive Coulomb-like potentials. ⺠Dependence of the cyclotron frequency on the quantum numbers n, l and s.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Physics and Astronomy (General)
Authors
K. Bakke, F. Moraes,