Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10731498 | Radiation Physics and Chemistry | 2011 | 7 Pages |
Abstract
A Schottky diode with configuration Au/Carmine/p-Si/Al has been fabricated and it has been seen that the thin film on the p-Si substrate has exhibited a good rectifying behavior. The current-voltage (I-V) characteristics of the device have been investigated in dark before electron irradiation and under white light illumination and after 12Â MeV electron irradiation with fluency of 3Ã1012Â eâ/cm2. It has been seen that the device is sensitive to illumination and to electron irradiation. The barrier height value has decreased under illumination. The ideality factor and series resistance values have increased by 12Â MeV electron irradiation. Furthermore, it has also seen that the reverse bias current and capacitance of the device have decreased after electron irradiation. This has been attributed to decrease in net ionized dopant concentration with electron irradiation.
Related Topics
Physical Sciences and Engineering
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Radiation
Authors
Å. AydoÄan, A. Türüt,