Resistant behavior of a novel silica-based octyl(phenyl)-N,N-diisobutyl carbamoylmethylphoshine oxide neutral extraction resin against nitric acid, temperature and γ-radiation

The resistant behavior of a novel silica-based octyl(phenyl)-N,N-diisobutylcarbamoyl-methylphoshine oxide (CMPO) extraction resin (CMPO/SiO2-P) against HNO3, temperature and γ-radiation had been investigated. The adsorption properties of the treated CMPO/SiO2-P resin were evaluated by a 3 M HNO3 solution containing 0.01 M Nd(III). It was found that 3 M or 0.01 M HNO3 concentration did not decrease the stability of CMPO/SiO2-P at 25°C. The HNO3 concentration effect on the leakage of CMPO/SiO2-P resin at 80°C was obviously higher than that of at 25°C. The adsorbed amount of Nd(III) onto the treated CMPO/SiO2-P resin was determined in the range of 0.1769-0.1839 mmol/g, which basically approached to 0.1875 mmol/g, the adsorbed quantity of fresh CMPO/SiO2-P resin for Nd(III). The contents of P and C leaked from CMPO/SiO2-P resin obviously increased with an increase in the radiation dose (ID) from 1.0 to 4.1 MGy in terms of the linear equations: [P]=110.05ID+21.92 and [C]=7683.8ID−919.8. The adsorbed amount of Nd(III) onto the radiated CMPO/SiO2-P resin quickly decreased from 0.1499 to 0.0900 mmol/g according to the equation QNd(III)=−0.0222ID+0.1778, showing a large quantity of CMPO leaked from CMPO/SiO2-P resin.