Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10734092 | Radiation Physics and Chemistry | 2005 | 5 Pages |
Abstract
Polycarbonate films (20 micron thick) were irradiated with 85Â MeV oxygen and 100Â MeV silicon ion beams at fluences that varied from 5Ã1011 to 1Ã1013 ions/cm2 were characterized with UV-visible spectroscopy. The optical band gap (Eg) values, calculated from the absorption edge in the 200-800Â nm region using the Tauc relation, varied from 2.98 to 3.36Â eV in oxygen irradiated samples and from 1.86 to 3.04Â eV for silicon irradiated samples. The cluster size showed a range of 102-340 carbon atoms per cluster in both ion irradiations. The energy band gap in the cluster was found to decrease with transferred energy density of the ion beams.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Radiation
Authors
M. Mujahid, D.S. Srivastava, Shiuli Gupta, D.K. Avasthi,