Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11008820 | Current Applied Physics | 2018 | 22 Pages |
Abstract
We report a new method of measuring the non-radiative recombination rate in bulk Silicon. Synchrotron time-resolved x-ray scattering (TRXS) combines femtometer spatial sensitivity with nanosecond time resolution to record the temporal evolution of a crystal lattice following intense ultrafast laser excitation. Modeling this data requires an Auger recombination time that is considerably slower than previous measurements, which were made at lower laser intensities while probing only a relatively shallow surface depth. We attribute this difference to an enhanced Coulomb interaction that has been predicted to occur in bulk materials with high densities of photoexcited charge carriers.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Wonhyuk Jo, Eric C. Landahl, Seongheun Kim, Dong Ryeol Lee, Sooheyong Lee,