Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
11008943 | Superlattices and Microstructures | 2018 | 12 Pages |
Abstract
In this paper, a novel superjunction LDMOS with partial low K layer (PLK SJ LDMOS) and linear doping region is presented, which not only breaks the silicon limit, but also overcomes the drawback of SOI devices with lower vertical breakdown voltage (BV). In the x direction, the linear doping optimizes the drift region charge distribution and shields the substrate assisted depletion effect (SAD). Finally, the lateral BV of the device is improved. In the y direction, the LK dielectric in the buried layer strengthens the electric field of buried layer, thereby enhancing the vertical withstand voltage. Simulated results show that the PLK SJ LDMOS with the drift region length of 45â¯Î¼m can achieve BV of 799â¯V and figure-of-merit (FOM) of 6.2â¯MWâ¯cmâ2. Compared with the conventional SJ LDMOS (Con. SJ LDMOS), the BV and FOM are improved by 50% and 72.2%, respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Lijuan Wu, Yinyan Zhang, Hang Yang, Yue Song, Na Yuan, Bing Lei, Limin Hu, Yiqing Wu,