Revealing conducting filament evolution in low power and high reliability Fe3O4/Ta2O5 bilayer RRAM

For the Ag/Fe3O4/Ta2O5/Pt device, we measured the electrical properties and observed the filament shape/evolution during the Forming process viain/ex-situtransmission electron microscopy (TEM).Ex-situ TEM observation showed that the CF was composed of many weak filaments to transform the device to the low-resistance state (LRS). The results of energy dispersive spectrometry (EDS) analysis showed that the filament was composed of Ag metal. In addition, the in-situ TEM observation demonstrated the whole Ag filament Forming process in high reliability Fe3O4/Ta2O5 bilayer RRAM devices.224