Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1264420 | Organic Electronics | 2007 | 5 Pages |
Abstract
The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol-gel SiO2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol-gel SiO2 (1.9Â Ã
root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43Â cm2/Vs, on-off ratio of 107, and a subthreshold swing of 102Â mV/decade when operating at â20Â V.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
T. Cahyadi, H.S. Tan, E.B. Namdas, S.G. Mhaisalkar, P.S. Lee, Z.-K. Chen, C.M. Ng, F.Y.C. Boey,