Solution processable bilayered gate dielectric towards flexible organic thin film transistors

A low k triblock copolymer (Pluronic P123, BASF, EO20-PO70-EO20) and Polystyrene (PS) composite thin film (k ∼ 2.8) was used as a buffer layer to avoid the direct contact between the high k Polyacrylonitrile (PAN) dielectric layer (k ∼ 5.5) and organic semiconducting layer. This new bilayer gate dielectric with low k value of 3.7 is beneficial for enhancement of flexible organic thin film transistors electric performance with improved reliability.