Low power flexible organic thin film transistors with amorphous Ba0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperature

We deposited amorphous Ba0.7Sr0.3TiO3 (BST) on silicon and plastic substrate under 110 °C by pulsed laser deposition (PLD) and use it as the dielectric of the organic transistor. Depends on the thickness of BST layer, the highest mobility of the devices can achieve 1.24 cm2 V−1 s−1 and 1.01 cm2 V−1 s−1 on the silicon and polyethylene naphthalate (PEN) substrate, respectively. We also studied the upward and downward bending tests on the transistors and the dielectric thin films. We found that the BST dielectric pentacene transistor can maintain the mobility at 0.5 cm2 V−1 s−1 or higher while the bending radius is around 3 mm in both upward and downward bending. Our finding demonstrates the potential application of PLD growth high-k dielectric in the large area organic electronics devices.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Study and compare the bending effects on the lower power flexible OTFT. ► Demonstrate high-k BST dielectric for OTFTs with good performance parameters. ► Low processing temperature for the high-k dielectric layer. ► Demonstrate the potentials of metal oxides grown by PLD in organic electronics.