Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1273138 | International Journal of Hydrogen Energy | 2010 | 7 Pages |
Abstract
We evaluate the hydrogen content in hydrogenated amorphous germanium- and carbon- and also boron- and phosphorus-doped nanocrystalline silicon films obtained by a plasma chemical deposition technique. The films were made of a silicon-containing mixture (silane) heavily diluted with hydrogen and an inert gas (argon), and also methane and germane. In the study we use a combination of Infrared spectroscopy, recoil proton method and X-rays diffraction analysis. The hydrogen content is found to be as great as16Â at% for the nanocrystalline films and 24Â at% for the alloys. The hydrogen content in the alloys increases with the carbon concentration and decreases with germanium.
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Authors
B.A. Najafov, V.R. Figarov,