Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1279483 | International Journal of Hydrogen Energy | 2008 | 5 Pages |
Abstract
The effect of hydrogen absorption on the electrical resistance and activation energy of MmNi4.5Al0.5 thin film was investigated. The samples were prepared by oblique deposition at different angles (θ=0â,30â,45â,60â, and 75â) simultaneously at a pressure of 10-5 Torr at room temperature and thickness of thin film were measured using quartz crystal thickness monitor. It was found that the resistance and activation energy of MmNi4.5Al0.5 thin films increases with the angle of deposition. The activation energy of MmNi4.5Al0.5Hx films is found to be higher than MmNi4.5Al0.5 films for the same deposition angle and also increases with angle of deposition. The activation energy of hydrogenated samples in lower temperature range is found to increase with hydrogen charging cycle but in higher temperature range activation energy of hydrogenated samples is found to decrease due to discharge of hydrogen.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
I.P. Jain, M. Vashistha, P. Sharma, R.K. Jain, B. Devi,