| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1283360 | International Journal of Hydrogen Energy | 2009 | 4 Pages |
Abstract
PECVD grown boron nitride (BN) on crystalline silicon (c-Si) semiconductor was investigated by admittance measurement in the form of metal/insulator/semiconductor (MIS) structure. Apart from well-known regimes of traditional MOS structure, gradual bypassing of depletion layer was observed once ambient temperature (frequency) increased (decreased). Such an anomalous behavior was interpreted through modulations of charges located within BN film and/or at the interfacial layer of BN film/c-Si junction in terms of weighted average concept.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Orhan Özdemir,