Temperature study of Raman, FT-IR and photoluminescence spectra of ZnPc thin layers on Si substrate

The temperature study of zinc phthalocyanine (ZnPc) thin layers deposited on (0 0 1) Si substrate using Raman, FT-IR absorption and photoluminescence (PL) methods are reported. The Raman scattering spectra of ZnPc layers were investigated in the spectral range 1250–1650 cm−1 and in the temperature range 100–500 K. The changes of spectral parameters such as the band position, integrated intensity and full width at half maximum (FWHM) of selected Raman modes while heating and cooling processes have been determined. The fast decrease of the frequency and the intensity of these modes observed with the increase of the temperature above 420 K, can be probably caused by the change of crystalline form of ZnPc thin layer. The FT-IR measurements have been performed in the temperature range 98–523 K. Our study allowed us to estimate the orientation of the molecular plane similar to these of CuPc thin films deposited on Si substrate. The Raman spectra have been compared with FT-IR spectra of ZnPc molecules in KBr pellets and thin layers of ZnPc on (0 0 1) Si substrate. The PL spectra of ZnPc layers were measured in the spectral range 350–1200 nm and in the temperature range 13–320 K. With increasing temperature from 13 to 175 K we observed the increase of PL bands at 1.76 and 1.85 eV which disappear reaching temperature above 200 K.