Dielectric and I–V characteristics of high luminous CdS nanostructures with confined geometrical growth

•Preparation of CdS nanowires with length 2.6 μm at 1.5 h and nanoflakes.•One step hydrothermal route by surfactant PEG.•Dielectric behavior drastically changes with those different nanowires.•I–V behavior also significantly changed.

We have demonstrated in simple hydrothermal route a convenient way to design various nanostructural growth of cadmium sulfide (CdS) with various shapes and morphologies by using different ambient conditions. The synthesized CdS nanoflakes and the first reported large distributed nanowires with lengths of 2.6 μm whose diameters varied on the chemical compositional variation of surfactant poly ethylene glycol (PEG) under controlled extreme pressure in vacuum autoclave. We noticed a drastic change of dc conductivity of CdS nanostructures in confined geometry depending on its duration period of preparation. We can tune the band gap also which quite differ from bulk CdS value due to different structural behavior. The dielectric constant is higher for 3 h duration and we observed two relaxations, one at low frequency region and other, at higher frequency for 3 h duration system in compare to a single relaxation at low frequency region for 4 h duration system. From I–V characteristics we obtain an idea about different breakdown voltages and bi stable switching capability of such.