Syntheses and crystal structures of the homoleptic [Et4N][M(SC6H4Me-p)4] (M = Ga, In) and [Et4N][Ga(SePh)4]

Treatment of [Et4N][GaCl4] with four equivalents of NaQR in methanol afforded the substitution complexes [Et4N][Ga(QR)4] (QR = SC6H4Me-p1, QR = SePh 3), while the indium analogues [Et4N][In(SC6H4Me-p)4] (2) was prepared by the reaction of InCl3·3H2O and NaSC6H4Me-p in the presence of [Et4N]Cl·xH2O. The structures of these three complexes, as determined by single-crystal X-ray diffraction, feature well-separated cations and anions with the metal centers of the anions tetrahedrally coordinated to four thiolate or selenolate ligands. The thermal stability of the three complexes was studied by thermal gravimetric analysis.