Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1480167 | Journal of Non-Crystalline Solids | 2016 | 5 Pages |
Abstract
•The presence of large amounts of non-bonded hydrogens in a-Si:H resulted in changes in the vacancy size distribution.•The vacancy size distribution was determined using positron annihilation lifetime spectroscopy.
It was demonstrated that the presence of large amounts (≥ 2.8 at.%) of non-bonded hydrogens (NBHs) in hydrogenated amorphous silicon (a-Si:H) resulted in changes in the vacancy size distribution, where the vacancy size distribution was determined using positron annihilation lifetime spectroscopy. NBHs in small vacancies induced large nanovoids (>~1 nm), via the relaxation of internal stresses in the a-Si network, without decreasing the atomic number density of the silicon.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Takeyuki Sekimoto, Mitsuhiro Matsumoto, Akihiko Sagara, Mitsuoki Hishida, Akira Terakawa,