Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1480797 | Journal of Non-Crystalline Solids | 2015 | 7 Pages |
•The crystal growth of Sb2S3 was studied in (GeS2)x(Sb2S3)1 − x thin films.•Wide temperature range was examined by classical microscopy and high-speed camera.•The 2D surface nucleated model is operative for the growth data.•The Stokes–Einstein relation between growth rate and viscosity was discussed.
The isothermal crystal growth kinetics of Sb2S3 in (GeS2)x(Sb2S3)1 − x thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480–625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid–crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed.