Electrical switching in amorphous Si–Te–Ge thin films: Impact of input energy on crystallization process and switching parameters

Electrical switching studies on amorphous Si15Te74Ge11 thin film devices show interesting changes in the switching behavior with changes in the input energy supplied; the input energy determines the extent of crystallization in the active volume, which is reflected in the value of SET resistances. This in turn, determines the trend exhibited by switching voltage (Vt) for different input conditions. The results obtained are analyzed on the basis of the amount of Joule heat generated, which determines the temperature of the active volume. Depending on the final temperature, devices are rendered either in the intermediate state with a resistance of 5 ∗ 102 Ω or the ON state with a resistance of 5 ∗ 101 Ω.

► Amorphous thin film devices of thickness 60 nm have been fabricated in sandwich geometry. ► A method of inducing varying levels of crystallization of the amorphous material is discussed. ► The impact of input energy on the crystallization process is studied. ► The dependence of electrical switching voltage, and SET resistance of the material on input energy is studied.