Article ID Journal Published Year Pages File Type
1481664 Journal of Non-Crystalline Solids 2012 4 Pages PDF
Abstract
► Light-induced changes in hydrogenated amorphous silicon (a-Si:H) are studied. ► Prolonged illumination reduces the density of hole trap states in undoped a-Si:H. ► Subsequent thermal annealing increases the density of hole traps after illumination. ► We speculate that defect conversion processes are taking place under illumination.
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Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Preview
Light-induced annealing of hole trap states: A new aspect of light-induced changes in hydrogenated amorphous silicon
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