a-Si:H transport parameters from experiments based on photoconductivity

In this paper we review some of the techniques based on the photoconductivity property of hydrogenated amorphous silicon (a-Si:H) from which it is possible to extract transport parameters as well as density of states (DOS) spectroscopies. We also present a new experiment based on the steady state photocarrier grating technique. We show that combined with simple steady state photoconductivity it gives information on the DOS. The comparison of these results with those of other techniques used for DOS measurements theoretically allows determination of transport parameters in a-Si:H.

► We consider several techniques developed to determine a-Si :H transport parameters. ► These techniques utilize a-Si:H photoconductivity property. ► We underline the information that can be deduced from each of these techniques. ► Their results are cross correlated. ► Parameters like extended states electronic mobility can then be deduced.