Evaluation of charge trapping properties of microcrystalline germanium thin films by Kelvin force microscopy

We have prepared highly-crystallized germanium (Ge) films on quartz and evaluated their local charge trapping and electrical conduction properties from topographic and surface potential images simultaneously taken by a conductive atomic force microscopy (AFM) during and after current application to Ge films. By applying a bias of 10 V at which the current of ~ 8 mA flows between the co-planer electrodes on Ge films, the surface potential image which was uniform before bias application shows in-plane inhomogeneity within ~ 1.0 mV commensurate with the surface morphology. Such potential images remained inhomogeneous at zero bias for more than two hours after bias application. The inhomogeneous potential images can be interpreted in terms of the difference in electron concentration in highly-crystallized Ge films presumably caused by electron charging in the grain boundaries, indicating direct detection of electrically separated grain structures and resultant percolation current pass.

► Surface potential images of μc-Ge:H films show inhomogeneity with bias applications. ► Inhomogeneity in the images was also observed at zero bias for more than two hours. ► The image contrast reflects the difference in the electron concentration. ► The results indicate direct detection of electrically separated grain structures.