| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1481688 | Journal of Non-Crystalline Solids | 2012 | 4 Pages |
Si quantum dots/SiO2 multilayers were prepared by annealing a-Si:H/SiO2 stacked structures at 1100 °C . Photo- and electro-luminescence band around 750 nm can be observed from Si QDs/SiO2 multilayers due to the recombination of electron-hole pairs in Si QDs/SiO2 interfaces. The electro-luminescence intensity was obviously enhanced after post hydrogen annealing at 400 °C. Electron spin resonance measurements were used to characterize the change of the defect states after hydrogen annealing. It is found that there exists a-centers (g value = 2.006), which is related to the Si dangling bonds in Si QDs in our samples. Hydrogen annealing can significantly reduce non-luminescent a-centers and enhance the electro-luminescence intensity consequently.
► Si QDs/SiO2 multilayers were prepared by annealing a-Si:H/SiO2 stacked structures. ► Room temperature electroluminescence can be observed from Si QDs-based multilayers. ► EL intensity is significantly enhanced by hydrogen annealing at 400 °C. ► ESR demonstrated that hydrogen annealing can passivate defect states in Si QDs.
