Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD

The planar conductance technique has been previously used in the study of amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunctions, grown using conventional Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD), to examine the existence of a strong inversion layer at the c-Si surface. In the present study such measurements were undertaken on a series of heterojunctions in order to provide insight into the nature of the electrical interface between the hydrogenated amorphous silicon, deposited using the DC Saddle Field PECVD system, and the underlying crystalline silicon wafer. The films showed good passivation and a strong inversion layer, indicating their amenability for device applications.

► Amorphous silicon grown by dc saddle field plasma enhanced chemical vapor deposition. ► Conductance of p-doped films measured on glass and on n-doped crystalline silicon. ► A strong inversion layer was detected as well as good passivation.