| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1481732 | Journal of Non-Crystalline Solids | 2012 | 5 Pages |
In this work is presented the fabrication of a thin film membrane as a bio-transducer for aural assistance detection, therefore it will operate at low pressure. The resonant membrane was deposited by PECVD technique at low temperature of deposition T = 270 °C, using SiH4, GeH4, and Boron gases. The membrane was suspended on a micromachined crystalline silicon frame obtained by wet chemical etching. The a-SiGe:B film presented a resistivity of 2.46 × 103 (Ω-cm), resistance of 20.8 kΩ. Using these experimental data we succeeded in designing a simple structure for sensing low pressure variations. The output voltage of the sensor was measured for a range of pressure from 0 to 3000 Pa and at bias voltage of 10 V.
► A pressure sensor using a membrane structure was fabricated at the first time. ► The membrane is based on a-SiGeB thin films deposited by LF-PECVD. ► The aSiGe: B presented a resistivity of 2.4 × 103 (Ω-cm), and a resistance of 20.8 kΩ. ► The sensor showed a sensitivity of .03mVPa-1with changes of resistance in kΩ. ► The fabrication process allows integration at low T of processing for Si- technology.
