| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1481734 | Journal of Non-Crystalline Solids | 2012 | 4 Pages |
Abstract
⺠Ambipolar characteristics of a-SiGe:H TFTs fabricated at 200 °C were obtained. ⺠Subthreshold slope for both regions is an improvement for low-temperature TFTs. ⺠Spin-On Glass as the gate insulator improved the insulator-semiconductor interface. ⺠a-SiGe:H film has a higher Density of States due to the incorporation of Ge.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Miguel Dominguez, Pedro Rosales, Alfonso Torres, Mario Moreno, Joel Molina, Francisco De la Hidalga, Carlos Zuniga, Wilfrido Calleja,