| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1481735 | Journal of Non-Crystalline Solids | 2012 | 4 Pages |
Abstract
⺠The nc-Si dots array is used to store information for nonvolatile memory based on the principle of discrete charge storage. ⺠The treatment of nitridation of nc-Si dots can effectively improve the charge storage characteristics and program speed. ⺠The nitrided Si layer acted as a barrier for the carriers tunneling back to the channel and then enhanced the retention time.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Xin-Ye Qian, Kun-Ji Chen, Yue-Fei Wang, Xiao-Fan Jiang, Zhong-Yuan Ma, Zhong-Hui Fang, Jun Xu, Xin-Fan Huang,