| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1482341 | Journal of Non-Crystalline Solids | 2012 | 5 Pages |
In this work we report studies of the photoluminescence emission in samples based on Si/SiOx films deposited by the Pulsed Electron Beam Ablation (PEBA) technique. The samples were prepared at room temperature using targets with different Si/SiO2 concentrations. The samples were characterized using X-ray Absorption Edge Spectroscopy (XANES) at the Si―K edge, Raman spectroscopy, Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS). The concentration of a-Si and nc-Si in the film was dependent on the silicon concentration in the target. It was also observed that the PL is strongly dependent on the structural amorphous/crystalline arrangement.
Highlight► Structural analysis of SiOx films deposited by the Pulsed Electron Beam Ablation. ► This technique produces films at room temperature. ► It produced Si-rich SiOx films using targets made of Si/SiO2 powder mixtures. ► Photoluminescence was obtained as result at visible range.
