Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1482419 | Journal of Non-Crystalline Solids | 2009 | 5 Pages |
Abstract
A quarter wave stack dielectric filter with normal incidence pass band in near-infrared range was prepared from alternating high index contrast chalcogenide films. The prepared filter consists of a low index Ge-S spacer layer surrounded by two 4.0 pairs Sb-Se/Ge-S reflectors. Films were deposited using flash and thermal evaporation techniques. After deposition, the filter was annealed at 165 °C for 1 h. Optical reflectivity measurements of the annealed filter revealed a â¼63% normal incidence passband near 1540 nm. An â¼80% passband was recorded after illumination of the filter by the light with s-polarization at angles 35°, 45° and 55°, while its position shifted to 1451, 1476 and 1505 nm, respectively. A â¼75% passband appeared near 1436, 1467 and 1498 nm in response to illumination of the filter by the light with p-polarization at the same angles. The angular dependence of the reflectivity of dielectric multilayer can be exploited for filtering of incident light.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
T. Kohoutek, J. Orava, J. Prikryl, T. Wagner, Mil. Vlcek, P. Knotek, M. Frumar,