Surface pattern recording in amorphous chalcogenide layers

Investigations of light-induced volume expansion and surface pattern recording in amorphous chalcogenide layers and nano-layered structures (NLS) were extended to direct electron-beam recording on Se/As2S3 and Sb/As2S3 NLS. Light as well as e-beam induced bleaching occurs in all NLS, while volume expansion occurs only in chalcogenide–chalcogenide NLS and in homogeneous Se or As2S3 layers. Comparison of these two phenomena revealed the possible role of purely electronic and thermal processes in the interdiffusion and relief formation. The latter is supposed to be connected with radiation-induced defect creation, free volume increase under the increased fluidity conditions as well as with the possible additional influence of electrostatic forces and stress.