Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1483235 | Journal of Non-Crystalline Solids | 2010 | 6 Pages |
Abstract
Photoconductivity (PC) variations of device-grade a-Si:H thin films due to proton irradiation are investigated in this paper. We performed in-situ measurements of the PC variations induced by 0.10, 1.0 and 10Â MeV proton irradiations. The irradiation initially caused an increase in PC in all sample. However, continued irradiation resulted in a dramatic decrease as the irradiation fluence increased. The results obtained in this study suggest that the PC increment is caused not by accumulation of displacement damage. We also found that the dark conductivity (DC) was drastically increased in the same manner as the PC increment, whereas the photosensitivity had a minimum value at the peak of the PC increment. The results of the temperature dependence of PC for a-Si:H before and after 10Â MeV proton irradiation showed that such a proton-induced PC increment consisted of two components: one thermally stable and one metastable. The thermally metastable component disappeared in the temperature region of 300 to 340Â K. On the contrary, radiation-induced defects were annealed above 340Â K.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Shin-ichiro Sato, Hitoshi Sai, Takeshi Ohshima, Mitsuru Imaizumi, Kazunori Shimazaki, Michio Kondo,