Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1483418 | Journal of Non-Crystalline Solids | 2010 | 4 Pages |
Abstract
Boron-doped hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by radiofrequency magnetron sputtering and the film-thickness dependence of the structural and electrical properties was investigated. The target was a boron-doped silicon wafer on which boron grains were put or not on top of it. At room temperature, the dark conductivities of the μc-Si:H thin films prepared without boron grains were below 10â 6 S cmâ 1. On the other hand, for the films prepared with boron grains having thickness above 50 nm, the conductivities were higher than 6 Ã 10â 1 S cmâ 1 and their activation energies were about 0.05 eV. As the film thickness was decreased, the dark conductivity decreased: â¼Â 10â 1 S cmâ 1 for the 20 nm film and â¼Â 10â 6 S cmâ 1 for the 10 nm film. This decrease was caused by the decrease in the crystalline volume fraction.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Akimori Tabata, Junya Nakano, Koji Mazaki, Kota Fukaya,