Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1483540 | Journal of Non-Crystalline Solids | 2009 | 6 Pages |
Abstract
Inner pore channels were commonly found in precursor-derived Si–C–N ceramics. After annealing in air at 1420 °C, their oxidation structures were investigated by analytical TEM. A carbon-rich ring was frequently observed under the silica layer inside the pore channels, which consisted of graphite-like clusters in size of 20–30 nm. Origin of such interfacial structure is due to the excessive free-carbon in the amorphous Si–C–N matrix that had survived the oxidation process. This graphitic interface could further improve the oxidation resistance of the SiO2 over-layer. This novel interfacial structure was also found by annealing in N2, reaffirming the effect of composition of Si–C–N matrix.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ling-yan Li, Hui Gu, Yong-jun Tian, Toshiyuki Nishimura, Joachim Bill,