Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1483966 | Journal of Non-Crystalline Solids | 2009 | 4 Pages |
Abstract
We studied the optical absorption in the 3.0-6.2 eV range induced in bulk amorphous SiO2 by β-ray irradiation up to â¼1 MGy at room temperature. The induced absorption was measured in situ both during irradiation and in the post irradiation time. Our data evidence EγⲠcenter as the main defect induced by irradiation and the partial decay of their absorption band at about 5.8 eV after irradiation. A quantitative analysis of the time evolution of the induced absorption shows that the transmission recovery observed after irradiation is compatible with the reaction of radiation-induced defects with H-related (H2, H2O) species diffusing in the amorphous matrix.
Keywords
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
S. Agnello, M. Cannas, F. Messina, L. Nuccio, B. Boizot,