Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1483997 | Journal of Non-Crystalline Solids | 2009 | 5 Pages |
Abstract
We developed a one-dimensional numerical simulation code for the calculation of the gate voltage–capacitance characteristic of MOS structures including the self-consistently solving of the Schrödinger and Poisson equations for different alternative channel materials with high mobility such as Ge, and non-conventional gate dielectrics such as HfO2 and Al2O3. Our simulation results are confronted to experimental data for various MOS structures with different semiconductors and dielectric stacks.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
M. Moreau, D. Munteanu, J.-L. Autran, F. Bellenger, J. Mitard, M. Houssa,