Semiconductor-nanoheterointerface eigenstate photonic modification

As a crucial issue permeating the optoelectronic functionality of a technological semiconductor nanodevice, modification of its two-dimensional electron gas (2DEG) eigenstate by absorption of regulated successive photon-doses is studied for a generic case of a conventional nanoheterodiode in terms of the 2DEG fundamental-sublevel eigenenergy correlation with respective 2DEG areal density, versus instantaneous cumulative photonic intake. Application of this treatment to the experimental photoresponse of a typical AlxGa1−xAs/GaAs modulation - doped heterodiode leads to a realistic tracing of the pertinent 2DEG-eigenstate photonic modification. Indirect justification of the scheme appears to be provided by the measured 2DEG mobility photonic evolution being compatible with the evolution deduced for the nanoheterointerface fundamental-wavefunction penetration-length into the energetic-barrier region adjacent to the 2DEG quantum well.