Vacuum-deposited poly(o-methoxyaniline) thin films: Structure and electronic properties

Thin poly(o-methoxyaniline) (POMA) films have been formed by thermovacuum deposition in the temperature range of 350-450 °C and at a pressure of 5 × 10−5 Torr. The structure properties of vacuum deposited POMA films according to FTIR and UV-VIS spectra are similar to those observed for the emeraldine form of polyaniline. Current-voltage characteristics (I-V) of sandwichtype device ITO/POMA/A1 possess rectifying properties with the ideality factor ≈4 at room temperature. On the basis of the dependence of conductivity on frequency in the frequency range of 10 Hz to 1 MHz, it is shown that the Pollack-Pohl current flow hopping mechanism dominates in a polymer film; such mechanism is typical of non-ordered systems.