Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1484657 | Journal of Non-Crystalline Solids | 2008 | 5 Pages |
Abstract
A series of hydrogenated amorphous silicon (a-Si:H) films were deposited in the transition region from amorphous to nanocrystalline phases by changing hydrogen dilution ratio R, deposition gas pressure, and RF power. Single junction a-Si:H solar cells were made using these materials as the intrinsic layers in the structure of n-i-p type on ZnO/Ag/stainless steel substrates. Light-induced degradations in the photovoltaic parameters were characterized on these cells after 1 Sun solar illumination for 150Â h. The stabilized efficiencies were compared in conjunction with the structures in the intrinsic layers, which were revealed by high resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectrometry (FTIR). It was found that the solar cells incorporated protocrystalline intrinsic layer as the i-layer give a better initial efficiency, while solar cells made from nanostructured i-layers have a better stability of â¼7% degradation against light soaking, as a result, both have nearly the same final stabilized efficiency. The best device stabilized efficiency reaches â¼10.2% (0.25Â cm2, AM1.5G) for the intrinsic layer deposited at a high pressure of 2Â Torr.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Wenhui Du, Xianbo Liao, Xinmin Cao, Xiesen Yang, Xunming Deng, Kai Sun,