Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1484658 | Journal of Non-Crystalline Solids | 2008 | 4 Pages |
Abstract
Using three electrode vacuum system for glow discharge of 5% SiH4 + 95% Ar gas mixture together with thermal evaporation of phosphorus or boric aced, the n- and p-type a-Si:H layers have been deposited. By co-evaporation of phosphorus or boric aced the conductivity of a-Si:H layers was changed in 10â11-10â3 Ωâ1 cmâ1 or 10â11 -10â8 Ωâ1 cmâ1 range, respectively. Blends of a-Si:H and tris-(8-hydroxyquinoline) aluminum (Alq3) have been vacuum-deposited by simultaneous glow discharge of 5% SiH4 + 95 % Ar gas mixture and thermal co-evaporation of Alq3. Photoluminescence spectrum of a-Si:H/Alq3 blend coincident with one of Alq3 was observed at room temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
KÄstutis Arlauskas, ArÅ«nas Baronas, Nerijus NekraÅ¡as, Karolis Kazlauskas,