Article ID Journal Published Year Pages File Type
1484658 Journal of Non-Crystalline Solids 2008 4 Pages PDF
Abstract
Using three electrode vacuum system for glow discharge of 5% SiH4 + 95% Ar gas mixture together with thermal evaporation of phosphorus or boric aced, the n- and p-type a-Si:H layers have been deposited. By co-evaporation of phosphorus or boric aced the conductivity of a-Si:H layers was changed in 10−11-10−3 Ω−1 cm−1 or 10−11 -10−8 Ω−1 cm−1 range, respectively. Blends of a-Si:H and tris-(8-hydroxyquinoline) aluminum (Alq3) have been vacuum-deposited by simultaneous glow discharge of 5% SiH4 + 95 % Ar gas mixture and thermal co-evaporation of Alq3. Photoluminescence spectrum of a-Si:H/Alq3 blend coincident with one of Alq3 was observed at room temperature.
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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