| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1484664 | Journal of Non-Crystalline Solids | 2008 | 4 Pages |
Abstract
This paper presents the results of PL spectrum study for Si nano-clusters in amorphous silicon matrix. The hydrogenated amorphous Si layers were prepared by the hot-wire CVD method on glass substrates. The layers were deposited at different wafer temperatures 280, 360, 420 and 460 °C and at one filament temperature of 1650 °C. The joint analysis of PL and X-ray diffraction spectra in dependence on the technological conditions and on different sizes of Si nano-clusters has been done. The mechanisms of PL are discussed as well.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
T.V. Torchynska, A.L. Quintos Vazquez, G. Polupan, Y. Matsumoto, L. Khomenkova, L. Shcherbyna,