Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1484688 | Journal of Non-Crystalline Solids | 2008 | 4 Pages |
Abstract
Photoluminescence of Si NCs with the size (10-300Â nm) bigger than the exciton Bohr radius in the bulk Si crystals (4.8Â nm) has been considered. Photoluminescence in such NC systems is analyzed from the point of view of new concept based on the effect of hot carrier ballistic transport in excitation of suboxide defect-related photoluminescence at the Si/SiOx interface. The dependence of the 1.70Â eV PL band integrated intensity on Si NC sizes was numerically calculated on the base of the hot carrier ballistic PL model. The well correlation between calculated and experimental results has been obtained for Si NCs with the size from the 30-150Â nm range.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
T.V. Torchynska,