| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1484689 | Journal of Non-Crystalline Solids | 2008 | 5 Pages |
Abstract
Microcrystalline silicon (μc-Si) films have been deposited on PDMS as well as on PEN substrate. Excimer laser annealing was used to improve the crystalline structure and so to obtain high mobility TFTs. The effect of the laser annealing on the crystalline structure of silicon films is studied using different characterization techniques and discussed. Mobility values of 60 cm2/V s with PDMS and 46 cm2/V s with PEN are obtained.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Tanguy Pier, Khalid Kandoussi, Claude Simon, Nathalie Coulon, Tayeb Mohammed-Brahim, Hervé Lhermite,