Article ID Journal Published Year Pages File Type
1484726 Journal of Non-Crystalline Solids 2008 6 Pages PDF
Abstract

ITO–SiOx–nSi semiconductor–insulator–semiconductor (SIS) structures have been produced with a simple spraying technique. It is shown that the structures obtained in such a way may be considered as an induced p–n diode, in which the polycrystalline tin–doped indium oxide (ITO) layer spray deposited on the preliminary treated silicon surface leads to an inversion p-layer at the interface. Solar cells with an active area of 1–4 cm2 have been fabricated based on ITO–SiOx–nSi structures and studied. Under AM0 illumination conditions, the efficiency is nearly 11%, whereas it exceeds 12% for AM1.5 illumination conditions. The theoretical analysis provided in this work shows a good agreement with experimental results and allows for predicting the efficiency of the cells depending on the silicon electro-physical properties.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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