Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1484733 | Journal of Non-Crystalline Solids | 2008 | 4 Pages |
Abstract
The influence of the crystalline volume fraction of hydrogenated microcrystalline silicon on the device performance of thin-film transistors fabricated at temperatures below 200 °C was investigated. Transistors employing microcrystalline silicon channel material prepared close to the transition to amorphous growth regime exhibit the highest charge carrier mobilities exceeding 50 cm2/V s. The device parameters like the charge carrier mobility, the threshold voltage and the subthreshold slope will be discussed with respect to the crystalline volume fraction of the intrinsic microcrystalline silicon material.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Kah-Yoong Chan, Dietmar Knipp, Aad Gordijn, Helmut Stiebig,