Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1484944 | Journal of Non-Crystalline Solids | 2007 | 5 Pages |
Abstract
We utilized the Tersoff–Brenner potential form potential to investigate SiF3 continuously bombarding silicon surface with energies of 10, 50 and 100 eV at normal incidence and room temperature by molecular dynamics method. The saturation of deposition yield of F and Si atoms on the surface is observed. A F-containing amorphous layer is formed whose thickness increases with incident energy. In the ejected gas-phase species, F, SiF and SiF2 species increases with increasing incident energy, while the amount of SiF3 species decreases.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Fujun Gou, Xu Ming, Sun Weili, T. Chen,