Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1485076 | Journal of Non-Crystalline Solids | 2008 | 5 Pages |
Abstract
Routes to atomic layer-deposited TiO2 films with decreased leakage have been studied by using electrical characterization techniques. The combination of post-deposition annealing parameters, time and temperature, which provides measurable aluminum-titanium oxide-silicon structures - i.e., having capacitance-voltage curves which show accumulation behavior - are 625 °C, 10 min for p-type substrates, and 550 °C, 10 min for n-type substrates. The best annealing conditions for p-type substrates are 625 °C with the length extended to 30 min, which produces an interfacial state density of about 5-6 Ã 1011 cmâ2 eVâ1, and disordered-induced gap state density below our experimental limits. We have also proved that a post-deposition annealing must be applied to TiO2/HfO2 and HfO2/TiO2/HfO2 stacked structures to obtain adequate measurability conditions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
S. Dueñas, H. Castán, H. GarcÃa, L. Bailón, K. Kukli, J. Lu, M. Ritala, M. Leskelä,