Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques

We report the preparation of multilayers based on polyamide-imide polymer and As-Se or Ge-Se chalcogenide thin films. Chalcogenide films of As-Se and Ge-Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide-imide films. Fifteen layers of PAI + As-Se system and nineteen layers of PAI + Ge-Se system were coated. Optical properties of prepared multilayers have been established using UV-vis-NIR and Ellipsometric spectroscopy. Both, PAI + As-Se and PAI + Ge-Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge-Se multilayers to lower energies was caused by higher thickness of Ge-Se films. The bandwidth of reflection band of 8 PAI + 7 As-Se multilayer was ∼90 nm while bandwidth of PAI + Ge-Se system decreased to ∼70 nm because Ge-Se films have 0.1 lower refractive index against As-Se films. Design of 1D-photonic crystals based on alternating chalcogenide and polymer films is a new opportunity for application of chalcogenide thin films as optical materials for near-infrared region.