Article ID Journal Published Year Pages File Type
1485204 Journal of Non-Crystalline Solids 2007 7 Pages PDF
Abstract
Admittance (Ym) versus applied gate bias (VG) on MIS structure (Cr/a-SiNx:H/p-Si) was measured as a function of frequency (mHz-MHz)/temperature (77-400 K) as parameters to investigate minority carrier behavior. Strong frequency dispersion in measured capacitance at inverting gate bias (positive biases for p-type silicon substrate) and low frequency behavior in capacitance-voltage (C-V) curves under high measuring frequencies (above kHz) at 300-400 K temperature interval are reported. This phenomenon is interpreted via lateral hopping conductivity of self-inversion charges beyond the gate inside a-SiNx:H film near interface as generation mechanism of minorities with a lower activation energy (0.11 eV) rather than prevailing mechanisms of much higher activation energies (namely, generation-recombination and diffusion).
Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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