Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1485204 | Journal of Non-Crystalline Solids | 2007 | 7 Pages |
Abstract
Admittance (Ym) versus applied gate bias (VG) on MIS structure (Cr/a-SiNx:H/p-Si) was measured as a function of frequency (mHz-MHz)/temperature (77-400Â K) as parameters to investigate minority carrier behavior. Strong frequency dispersion in measured capacitance at inverting gate bias (positive biases for p-type silicon substrate) and low frequency behavior in capacitance-voltage (C-V) curves under high measuring frequencies (above kHz) at 300-400Â K temperature interval are reported. This phenomenon is interpreted via lateral hopping conductivity of self-inversion charges beyond the gate inside a-SiNx:H film near interface as generation mechanism of minorities with a lower activation energy (0.11Â eV) rather than prevailing mechanisms of much higher activation energies (namely, generation-recombination and diffusion).
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Orhan Ãzdemir, İsmail Atilgan, Bayram KatircioÄlu,