Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1485266 | Journal of Non-Crystalline Solids | 2007 | 8 Pages |
Abstract
The sol-gel dip coating technique has been used to deposit composite oxide films (NiO)x(SiO2)1âx with x = 0.1 on silicon wafers. Single and multilayer coatings allowed a variation of the film thickness from 70 to 400 nm. Film morphology, atomic structure and atomic composition have been investigated by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). The local environment of the Ni atoms was characterized by extended X-ray absorption fine structure (EXAFS). The samples were studied in the as-prepared state and after annealing in H2 at 600 °C for 1 h. The structural and chemical state evolution of clusters present inside the silica matrix is discussed in terms of out-of-equilibrium reaction processes specific to low-dimensional objects and superficial effects.
Keywords
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
B. Canut, M.G. Blanchin, V. Teodorescu, A. Traverse,